94. 1٦, for a bipolar junction transistor, © 0.99, then B=:

(A)
(C)

0.099 (B) 1
99 (D) 100

95. Reverse breakdown of a PN diode under reverse bias due to increase in kinetic energy of free

electrons is called :

(A) Zener breakdown (B) Avalanche breakdown

(C) Tunnel breakdown ൯) Schottky breakdown
96. The majority charge carriers in P type semiconductor are :

(A) positive ions ൯) electrons

(C) negative ions ൯) 110५168

97. When a group V element such as arsenic is added to pure silicon, it results in the type

semiconductor referred to as :

(A)
(0

acceptor type (B) donor type
intrinsic type (D) ൩൦൩൭ of the above

98. The type of diode that exhibits negative resistance under low forward bias condition

1s:
(A)
(0

Varactor diode (B) Zener diode
Schottky diode (D) Tunnel diode

99. When compared to fullwave rectifier, a half wave rectifier is characterised by :

(A)
(0)
(0

(0)

excessive ripple, small value of rectification efficiency, small value of transformer
utilization factor and DC saturation of transformer core
excessive ripple, high value of rectification efficiency, high value of transformer
utilization factor and DC saturation of transformer core
lower ripple, small value of rectification efficiency, high value of transformer
utilization factor and DC saturation of transformer core
lower ripple, high value of rectification efficiency, small value of transformer
utilization factor and DC saturation of transformer core

100. For a bipolar junction transistor to operate in the active region, its :

(A)

(8)
(0

(0)

121/2021

collector-emitter junction is forward biased and base-collector junction is reverse
18806,

ase-collector junction is forward and base-emitter junction is reverse biased
ase-emitter junction is forward biased and base-collector junction is reverse
18806,

collector-emitter junction is reverse biased and base-collector junction is forward
18806,

14 A