10.

11.

051/23

. The poles and zeros of a driving-point function of a network are simple and interlace

on the negative real axis with a pole closed to the origin. It can be realized
A) As an LC driving-point impedance
B) As an RC driving-point impedance
C) As an LC driving-point admittance

)

D) As an RC driving-point admittance

. In a non-degenerate bulk semiconductor with electron density n = 1016 ണ്ണ, 15

value of E,— E-,, = 200meV. Assume the thermal voltage is 26 meV and the intrinsic
carrier concentration is 1019 cm-S. For n = 0.5 × 1016 cm-%, the closest approximation
of the value (E, — Er,) is

A) 182 meV B) 174 meV
C) 218 meV D) 226 meV

Drift current in semiconductors depends upon
A) Only the electric field

0

)

B) Only the carrier concentration gradient
) Both the electric field and carrier concentration
)

D) Both the electric field and carrier concentration gradient

Consider the following statements regarding MOS circuit design process.

1. MOS circuits are formed on four basic layers n-diffusion, p-diffusion, polysilicon
and metal; which are isolated from one another by thick or thin silicon dioxide
insulating layers.

2. Thin oxide (Thinox) mask region includes n-diffusion and p-diffusion and
transistor channel.

3. Polysilicon and thinox regions interact so that a transistor is formed where they
cross one another.

Which of the above statements are correct ?
A) 1 and 2 only B) 1 and 3 only
C) 2and3 only 0) 1, 2 804 3